STP22NM60N
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
$4.22
Available to order
Reference Price (USD)
1,000+
$3.31562
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the STP22NM60N by STMicroelectronics, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The STP22NM60N stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose STMicroelectronics.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPA60R099P6XKSA1
Taiwan Semiconductor Corporation
TSM80N950CH C5G
onsemi
NDT01N60T1G
onsemi
FDMS86200
Nexperia USA Inc.
PMV88ENEAR
Infineon Technologies
IPB160N04S4LH1ATMA1
Alpha & Omega Semiconductor Inc.
AOT470
Microchip Technology
APT40M35JVR
onsemi
MTP1N60E
Toshiba Semiconductor and Storage