STP28N60M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 24A TO220
$3.63
Available to order
Reference Price (USD)
1+
$3.63000
500+
$3.5937
1000+
$3.5574
1500+
$3.5211
2000+
$3.4848
2500+
$3.4485
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the STP28N60M2 single MOSFET from STMicroelectronics. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the STP28N60M2 combines cutting-edge technology with STMicroelectronics's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 170W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
IRFU224PBF
onsemi
FDMC0310AS-F127
Nexperia USA Inc.
PSMN3R4-30BLE,118
Vishay Siliconix
SI7806ADN-T1-GE3
Infineon Technologies
IPP80R600P7XKSA1
Fairchild Semiconductor
FDS4435A
STMicroelectronics
STP2NK90Z
IXYS
IXTT12N150
Vishay Siliconix
IRFD113PBF
onsemi