STU1HN60K3
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 1.2A IPAK
$1.08
Available to order
Reference Price (USD)
1+
$1.20000
75+
$0.97120
150+
$0.85680
525+
$0.67716
1,050+
$0.54648
2,550+
$0.51381
5,025+
$0.49094
Exquisite packaging
Discount
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Enhance your electronic projects with the STU1HN60K3 single MOSFET from STMicroelectronics. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust STMicroelectronics's STU1HN60K3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 27W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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