STW18N60DM2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 12A TO247
$3.54
Available to order
Reference Price (USD)
1+
$3.37000
30+
$2.74900
120+
$2.49183
510+
$1.97753
1,020+
$1.66897
2,520+
$1.56613
5,010+
$1.51470
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STW18N60DM2 single MOSFET from STMicroelectronics is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the STW18N60DM2 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
IXYS
IXTP64N10L2
onsemi
NTMFS4939NT1G
Panjit International Inc.
PJQ4402P_R2_00001
Infineon Technologies
SPI21N10
Diodes Incorporated
DMP6180SK3-13
Microchip Technology
APT75M50B2
IXYS
IXFA4N100Q
Infineon Technologies
IRL3705ZLPBF
Vishay Siliconix
SIHP33N60EF-GE3
Infineon Technologies