STW30NM50N
STMicroelectronics
STMicroelectronics
MOSFET N-CH 500V 27A TO247-3
$8.62
Available to order
Reference Price (USD)
1+
$9.96000
10+
$8.96700
100+
$7.37280
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STW30NM50N from STMicroelectronics sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to STMicroelectronics's STW30NM50N for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 115mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
onsemi
FDB8447L
Taiwan Semiconductor Corporation
TSM4NB65CP ROG
Diodes Incorporated
ZXMP6A17E6TA
Alpha & Omega Semiconductor Inc.
AOT190A60CL
Infineon Technologies
BTS247Z
Microchip Technology
APT5010JLLU3
STMicroelectronics
STF16NF25
Nexperia USA Inc.
BUK9611-80E,118
IXYS
IXTK200N10P
Diodes Incorporated