STW34NM60N
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 29A TO247-3
$11.10
Available to order
Reference Price (USD)
1+
$10.23000
30+
$8.50867
120+
$7.74300
510+
$6.59459
1,020+
$5.82900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the STW34NM60N by STMicroelectronics, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The STW34NM60N stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose STMicroelectronics.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Diodes Incorporated
DMP3018SFV-7
onsemi
NTMFS4C08NAT1G
Alpha & Omega Semiconductor Inc.
AON6792
onsemi
FCD5N60TM-WS
Vishay Siliconix
SIRC16DP-T1-GE3
Texas Instruments
CSD17585F5T
STMicroelectronics
STB20NM50T4
Vishay Siliconix
IRF540PBF-BE3
Microchip Technology
TP2640LG-G
Infineon Technologies