STY105NM50N
STMicroelectronics
STMicroelectronics
MOSFET N-CH 500V 110A MAX247
$26.97
Available to order
Reference Price (USD)
1+
$23.10000
30+
$19.63500
120+
$18.24900
510+
$15.93900
Exquisite packaging
Discount
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The STY105NM50N from STMicroelectronics sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to STMicroelectronics's STY105NM50N for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: MAX247™
- Package / Case: TO-247-3
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