STY60NM60
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 60A MAX247
$23.42
Available to order
Reference Price (USD)
1+
$20.84000
30+
$18.35667
120+
$16.17367
510+
$14.38763
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the STY60NM60 by STMicroelectronics, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the STY60NM60 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 560W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: MAX247™
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SI4838BDY-T1-GE3
Infineon Technologies
SPB100N04S2-04
Infineon Technologies
IRF1310NPBF
Diodes Incorporated
DMPH6250SQ-13
Taiwan Semiconductor Corporation
TSM80N950CI C0G
Panjit International Inc.
PJS6461_S1_00001
Infineon Technologies
IRFS3107TRLPBF
Fairchild Semiconductor
FCU3400N80Z
onsemi
FDMC86183
Vishay Siliconix