SUD23N06-31-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 9.1A/21.4A DPAK
$1.02
Available to order
Reference Price (USD)
1+
$1.02000
500+
$1.0098
1000+
$0.9996
1500+
$0.9894
2000+
$0.9792
2500+
$0.969
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SUD23N06-31-BE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SUD23N06-31-BE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 21.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
STMicroelectronics
STP11NM60FD
Infineon Technologies
IPA65R380C6XKSA1
onsemi
FDMC86262P
Vishay Siliconix
SIHG24N80AE-GE3
Panjit International Inc.
PJS6421-AU_S1_000A1
Infineon Technologies
BSZ058N03MSG
Microchip Technology
APT1003RSFLLG
Vishay Siliconix
SIHP21N80AEF-GE3
Vishay Siliconix
SQJ469EP-T1_GE3
Fairchild Semiconductor