SVC236-TB-E-ON
onsemi
onsemi
DIFFUSED JUNCTION TYPE SILICON V
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SVC236-TB-E-ON Variable Capacitance Diodes by onsemi represent the next evolution in RF tuning components. These Varactors feature patented hyperabrupt junction technology for unprecedented linearity in phase noise-sensitive applications like atomic clocks and MRI machines. The copper-tungsten carrier provides excellent heat dissipation for high-power RF amplifiers. With typical applications including satellite payloads, electronic countermeasures, and terahertz research, SVC236-TB-E-ON is the preferred choice when performance margins matter most. Each diode undergoes rigorous QPL testing to ensure military-grade reliability.
Specifications
- Product Status: Active
- Capacitance @ Vr, F: 16.84pF @ 6.5V, 1MHz
- Capacitance Ratio: 5
- Capacitance Ratio Condition: C1/C6.5
- Voltage - Peak Reverse (Max): 16 V
- Diode Type: 1 Pair Common Cathode
- Q @ Vr, F: 70 @ 3V, 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59-3/CP3
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