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T2N7002AK,LM

Toshiba Semiconductor and Storage
T2N7002AK,LM Preview
T2N7002AK,LM Preview
T2N7002AK,LM
T2N7002AK,LM
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 200MA SOT23
$0.16
Available to order
Reference Price (USD)
3,000+
$0.02550
6,000+
$0.02300
15,000+
$0.02000
30,000+
$0.01800
75,000+
$0.01600
150,000+
$0.01400
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 320mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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