TBC857B,LM
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 50V 0.15A SOT23-3
$0.17
Available to order
Reference Price (USD)
3,000+
$0.02945
6,000+
$0.02657
15,000+
$0.02310
30,000+
$0.02079
75,000+
$0.01848
150,000+
$0.01540
Exquisite packaging
Discount
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The TBC857B,LM by Toshiba Semiconductor and Storage is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the TBC857B,LM ensures efficient and stable operation. Backed by Toshiba Semiconductor and Storage's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 5mA
- Current - Collector Cutoff (Max): 30nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
- Power - Max: 320 mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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