TC58NYG2S0HBAI6
Kioxia America, Inc.

Kioxia America, Inc.
IC FLASH 4GBIT PARALLEL 67VFBGA
$5.23
Available to order
Reference Price (USD)
1+
$4.58000
10+
$4.16100
25+
$4.07040
50+
$4.04760
100+
$3.63010
338+
$3.61651
676+
$3.48333
1,014+
$3.31176
Exquisite packaging
Discount
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Experience top-tier performance with the TC58NYG2S0HBAI6 Memory IC from Kioxia America, Inc., a standout in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the requirements of advanced electronic systems. Its innovative architecture ensures efficiency and reliability.
The TC58NYG2S0HBAI6 exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The TC58NYG2S0HBAI6 provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The TC58NYG2S0HBAI6 is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NAND (SLC)
- Memory Size: 4Gb (512M x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 67-VFBGA
- Supplier Device Package: 67-VFBGA (6.5x8)