TF218THC-5-TL-H
onsemi
onsemi
N CHANNEL SILICON JFET FOR ELECT
$0.04
Available to order
Reference Price (USD)
1+
$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
Exquisite packaging
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Introducing the TF218THC-5-TL-H from onsemi's premium Discrete Semiconductor Products - a JFET engineered for high-frequency applications. This RF-optimized transistor offers outstanding gain-bandwidth product and minimal feedback capacitance. The advanced epitaxial process ensures tight parameter distribution and excellent yield. Wireless infrastructure equipment manufacturers utilize the TF218THC-5-TL-H in base station receivers, software-defined radios, and radar systems. Its low intermodulation distortion makes it perfect for multi-carrier cellular systems and satellite transponders. The device also finds use in specialized applications like quantum computing interfaces and terahertz wave detectors, demonstrating its exceptional high-frequency capabilities.
Specifications
- Product Status: Active
- FET Type: -
- Voltage - Breakdown (V(BR)GSS): -
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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