TJ200F04M3L,LXHQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 200A TO220SM
$3.32
Available to order
Reference Price (USD)
1+
$3.32000
500+
$3.2868
1000+
$3.2536
1500+
$3.2204
2000+
$3.1872
2500+
$3.154
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the TJ200F04M3L,LXHQ by Toshiba Semiconductor and Storage, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the TJ200F04M3L,LXHQ is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
- Vgs (Max): +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-220SM(W)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
STMicroelectronics
STD2N62K3
Fairchild Semiconductor
FDD24AN06LA0
Toshiba Semiconductor and Storage
TPH5200FNH,L1Q
EPC
EPC2039
IXYS
IXTT34N65X2HV
onsemi
FDB86569-F085
Sanyo
5HN02N
IXYS
IXFN66N85X
Toshiba Semiconductor and Storage
2SK1828TE85LF
Fairchild Semiconductor