Shopping cart

Subtotal: $0.00

TJ60S04M3L,LXHQ

Toshiba Semiconductor and Storage
TJ60S04M3L,LXHQ Preview
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 60A DPAK
$1.48
Available to order
Reference Price (USD)
1+
$1.48000
500+
$1.4652
1000+
$1.4504
1500+
$1.4356
2000+
$1.4208
2500+
$1.406
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Vgs (Max): +10V, -20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products

Vishay Siliconix

SQM100N02-3M5L_GE3

Diodes Incorporated

ZXMN2F34FHTA

Texas Instruments

CSD17382F4

Toshiba Semiconductor and Storage

SSM3K37MFV,L3F

Vishay Siliconix

SIR870DP-T1-GE3

Fairchild Semiconductor

FQP6N25

Vishay Siliconix

SI4423DY-T1-GE3

Top