TJ60S06M3L(T6L1,NQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 60V 60A DPAK
$0.98
Available to order
Reference Price (USD)
2,000+
$0.91000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TJ60S06M3L(T6L1,NQ by Toshiba Semiconductor and Storage is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the TJ60S06M3L(T6L1,NQ is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
- Vgs (Max): +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
FQP70N10
STMicroelectronics
STP110N55F6
Vishay Siliconix
SI8802DB-T2-E1
Infineon Technologies
IST015N06NM5AUMA1
STMicroelectronics
STH12N120K5-2
onsemi
FCA22N60N
IXYS
IXTN120P20T
Diodes Incorporated
DMT8012LSS-13
Sanken
FKP300A
Toshiba Semiconductor and Storage