TK12P60W,RVQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N CH 600V 11.5A DPAK
$1.01
Available to order
Reference Price (USD)
1+
$1.00950
500+
$0.999405
1000+
$0.98931
1500+
$0.979215
2000+
$0.96912
2500+
$0.959025
Exquisite packaging
Discount
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Enhance your electronic projects with the TK12P60W,RVQ single MOSFET from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Toshiba Semiconductor and Storage's TK12P60W,RVQ for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
- FET Feature: Super Junction
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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