TK2R4E08QM,S1X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
UMOS10 TO-220AB 80V 2.4MOHM
$3.03
Available to order
Reference Price (USD)
1+
$3.03000
500+
$2.9997
1000+
$2.9694
1500+
$2.9391
2000+
$2.9088
2500+
$2.8785
Exquisite packaging
Discount
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The TK2R4E08QM,S1X by Toshiba Semiconductor and Storage is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the TK2R4E08QM,S1X is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
- Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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