TK30A06N1,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 30A TO220SIS
$0.97
Available to order
Reference Price (USD)
1+
$0.94000
50+
$0.72540
100+
$0.63180
500+
$0.46800
1,000+
$0.37440
2,500+
$0.33930
5,000+
$0.32760
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the TK30A06N1,S4X single MOSFET from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Toshiba Semiconductor and Storage's TK30A06N1,S4X for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
BSO130P03SHXUMA1
onsemi
NVD5C454NLT4G
Diodes Incorporated
DMG2301LK-7
Diodes Incorporated
ZXM64P02XTA
Vishay Siliconix
SISS54DN-T1-GE3
Panjit International Inc.
PJA3460_R1_00001
Infineon Technologies
IRFR220NTRPBF
Fairchild Semiconductor
FDD7030BL
Alpha & Omega Semiconductor Inc.
AON2420
onsemi