TK31N60W,S1VF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N CH 600V 30.8A TO247
$8.85
Available to order
Reference Price (USD)
1+
$8.45000
30+
$6.92900
120+
$6.25300
510+
$5.23900
1,020+
$4.73200
Exquisite packaging
Discount
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Meet the TK31N60W,S1VF by Toshiba Semiconductor and Storage, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The TK31N60W,S1VF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Toshiba Semiconductor and Storage.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
- FET Feature: Super Junction
- Power Dissipation (Max): 230W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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