Shopping cart

Subtotal: $0.00

TK560P65Y,RQ

Toshiba Semiconductor and Storage
TK560P65Y,RQ Preview
Toshiba Semiconductor and Storage
MOSFET N-CHANNEL 650V 7A DPAK
$1.27
Available to order
Reference Price (USD)
2,000+
$0.49000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products

Panjit International Inc.

PJQ4464AP_R2_00001

Diodes Incorporated

DMP2075UVT-13

Nexperia USA Inc.

BUK7222-55A,118

Rohm Semiconductor

SCT4036KW7HRTL

Vishay Siliconix

SIB433EDK-T1-GE3

Microchip Technology

APT29F100B2

STMicroelectronics

STF57N65M5

Top