TK6A55DA(STA4,Q,M)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 550V 5.5A TO220SIS
$1.32
Available to order
Reference Price (USD)
50+
$1.20400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the TK6A55DA(STA4,Q,M) from Toshiba Semiconductor and Storage, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the TK6A55DA(STA4,Q,M) ensures reliable performance in demanding environments. Upgrade your circuit designs with Toshiba Semiconductor and Storage's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.48Ohm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
Rohm Semiconductor
RQ6E050ATTCR
Infineon Technologies
IPB80N06S209ATMA1
Infineon Technologies
IPS60R3K4CEAKMA1
Infineon Technologies
IRF6619TR1PBF
Vishay Siliconix
SQD50P04-13L_T4GE3
Toshiba Semiconductor and Storage
SSM6J412TU,LF
Rohm Semiconductor
RF4L055GNTCR
IXYS
IXFP180N10T2
IXYS
IXTH160N10T
Diodes Incorporated