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TK9P65W,RQ

Toshiba Semiconductor and Storage
TK9P65W,RQ Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 9.3A DPAK
$0.84
Available to order
Reference Price (USD)
2,000+
$0.78680
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 560mOhm @ 4.6A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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