TKR74F04PB,LXGQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 250A TO220SM
$4.75
Available to order
Reference Price (USD)
1+
$4.75000
500+
$4.7025
1000+
$4.655
1500+
$4.6075
2000+
$4.56
2500+
$4.5125
Exquisite packaging
Discount
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The TKR74F04PB,LXGQ from Toshiba Semiconductor and Storage sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Toshiba Semiconductor and Storage's TKR74F04PB,LXGQ for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-220SM(W)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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