TN2106N3-G
Microchip Technology
Microchip Technology
MOSFET N-CH 60V 300MA TO92-3
$0.70
Available to order
Reference Price (USD)
1+
$0.52000
25+
$0.43280
100+
$0.39140
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the TN2106N3-G single MOSFET from Microchip Technology. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the TN2106N3-G combines cutting-edge technology with Microchip Technology's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 740mW (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Related Products
Fairchild Semiconductor
FDI040N06
Texas Instruments
CSD16411Q3
PN Junction Semiconductor
P3M06060G7
Infineon Technologies
IPD90R1K2C3ATMA1
Infineon Technologies
IPAW60R190CEXKSA1
Fairchild Semiconductor
HUF76443P3
Texas Instruments
CSD23201W10
Diotec Semiconductor
MMFTN3404A
Toshiba Semiconductor and Storage
TPH1400ANH,L1Q
Toshiba Semiconductor and Storage