TP90H050WS
Transphorm
Transphorm
GANFET N-CH 900V 34A TO247-3
$20.03
Available to order
Reference Price (USD)
1+
$20.03000
500+
$19.8297
1000+
$19.6294
1500+
$19.4291
2000+
$19.2288
2500+
$19.0285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TP90H050WS from Transphorm redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the TP90H050WS offers the precision and reliability you need. Trust Transphorm to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 63mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id: 4.4V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 600 V
- FET Feature: -
- Power Dissipation (Max): 119W (Tc)
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
STMicroelectronics
STB14N80K5
Taiwan Semiconductor Corporation
TSM2N7002KCU
onsemi
NTNS2K1P021ZTCG
Infineon Technologies
IRLML6244TRPBF
Vishay Siliconix
SIDR570EP-T1-RE3
onsemi
SCH1334-TL-H
Rohm Semiconductor
R6042JNZ4C13
Rohm Semiconductor
RD3P175SNFRATL
STMicroelectronics
STFI20N65M5
PN Junction Semiconductor