TPH2R506PL,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 100A 8SOP
$1.55
Available to order
Reference Price (USD)
5,000+
$0.95900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the TPH2R506PL,L1Q from Toshiba Semiconductor and Storage, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the TPH2R506PL,L1Q ensures reliable performance in demanding environments. Upgrade your circuit designs with Toshiba Semiconductor and Storage's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 4.5V
- Vgs(th) (Max) @ Id: 2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5435 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 132W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
Related Products
Microchip Technology
APT10035JLL
Alpha & Omega Semiconductor Inc.
AOI4N60
Vishay Siliconix
IRFBC40LCPBF-BE3
Diodes Incorporated
DMN3021LFDF-7
Vishay Siliconix
IRLZ34SPBF
Vishay Siliconix
SIS822DNT-T1-GE3
Rohm Semiconductor
R6015KNJTL
IXYS
IXTQ26P20P
STMicroelectronics
STF2LN60K3
onsemi