TPH4R50ANH,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N CH 100V 60A SOP ADV
$2.95
Available to order
Reference Price (USD)
5,000+
$1.27400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TPH4R50ANH,L1Q by Toshiba Semiconductor and Storage is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the TPH4R50ANH,L1Q is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
Related Products
onsemi
FQP34N20
Infineon Technologies
SN7002NH6327XTSA2
onsemi
FDY102PZ
Vishay Siliconix
SI7898DP-T1-E3
Renesas Electronics America Inc
2SK3140-E
Vishay Siliconix
IRFP048RPBF
Nexperia USA Inc.
BUK9M7R2-40EX
IXYS
IXTA36P15P
Wolfspeed, Inc.
C3M0032120J1
Nexperia USA Inc.