TPHR6503PL1,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
UMOS9 SOP-ADV(N) PD=210W F=1MHZ
$2.09
Available to order
Reference Price (USD)
1+
$2.09000
500+
$2.0691
1000+
$2.0482
1500+
$2.0273
2000+
$2.0064
2500+
$1.9855
Exquisite packaging
Discount
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Optimize your power electronics with the TPHR6503PL1,LQ single MOSFET from Toshiba Semiconductor and Storage. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the TPHR6503PL1,LQ combines cutting-edge technology with Toshiba Semiconductor and Storage's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 210W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5.75)
- Package / Case: 8-PowerTDFN
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