TPN22006NH,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 9A 8TSON
$0.91
Available to order
Reference Price (USD)
3,000+
$0.31900
6,000+
$0.30800
Exquisite packaging
Discount
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The TPN22006NH,LQ from Toshiba Semiconductor and Storage sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Toshiba Semiconductor and Storage's TPN22006NH,LQ for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 18W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
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