TPS1101DR
Texas Instruments
Texas Instruments
MOSFET P-CH 15V 2.3A 8SOIC
$1.16
Available to order
Reference Price (USD)
2,500+
$0.97020
Exquisite packaging
Discount
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Enhance your electronic projects with the TPS1101DR single MOSFET from Texas Instruments. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Texas Instruments's TPS1101DR for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 15 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.25 nC @ 10 V
- Vgs (Max): +2V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 791mW (Ta)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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