TPS2830DR
Texas Instruments
Texas Instruments
IC GATE DRVR HIGH-SIDE 14SOIC
$1.80
Available to order
Reference Price (USD)
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$1.80000
500+
$1.782
1000+
$1.764
1500+
$1.746
2000+
$1.728
2500+
$1.71
Exquisite packaging
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Texas Instruments presents the TPS2830DR as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Obsolete
- Driven Configuration: High-Side
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.5V ~ 15V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 2.7A, 2.4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 28 V
- Rise / Fall Time (Typ): 50ns, 50ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
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