TQM250NB06CR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 60V 7A/32A 8PDFNU
$2.62
Available to order
Reference Price (USD)
1+
$2.62000
500+
$2.5938
1000+
$2.5676
1500+
$2.5414
2000+
$2.5152
2500+
$2.489
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TQM250NB06CR RLG from Taiwan Semiconductor Corporation redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the TQM250NB06CR RLG offers the precision and reliability you need. Trust Taiwan Semiconductor Corporation to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-PDFNU (5x6)
- Package / Case: 8-PowerTDFN
Related Products
STMicroelectronics
STW28N60DM2
Diodes Incorporated
DMN2990UFO-7B
Vishay Siliconix
SUD19N20-90-E3
Vishay Siliconix
IRFB20N50KPBF
onsemi
MCH3484-TL-H
Vishay Siliconix
SIE810DF-T1-GE3
onsemi
NTH4LN019N65S3H
Renesas Electronics America Inc
NP90N055VDG-E1-AY
Harris Corporation
IRF9530
STMicroelectronics