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TRS12E65C,S1Q

Toshiba Semiconductor and Storage
TRS12E65C,S1Q Preview
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 650V 12A TO220-2L
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$12.25000
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Specifications

  • Product Status: Obsolete
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 170 V
  • Capacitance @ Vr, F: 65pF @ 650V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: 175°C (Max)

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