TRS16N65FB,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
SIC SBD TO-247 V=650 IF=12A
$6.50
Available to order
Reference Price (USD)
1+
$6.50000
500+
$6.435
1000+
$6.37
1500+
$6.305
2000+
$6.24
2500+
$6.175
Exquisite packaging
Discount
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The TRS16N65FB,S1Q rectifier array from Toshiba Semiconductor and Storage redefines efficiency in the Diodes - Rectifiers - Arrays classification. Its optimized chip geometry enables higher surge withstand capability, critical for automotive alternators and arc suppression circuits. This product shines in three-phase rectification and snubber networks, offering aerospace-grade reliability. Toshiba Semiconductor and Storage's precision manufacturing ensures each TRS16N65FB,S1Q meets stringent quality standards for mission-critical applications.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 40 µA @ 650 V
- Operating Temperature - Junction: 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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