TRS4A65F,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F DIODE TO-220-2L V=650 IF=4A
$2.53
Available to order
Reference Price (USD)
1+
$2.53000
500+
$2.5047
1000+
$2.4794
1500+
$2.4541
2000+
$2.4288
2500+
$2.4035
Exquisite packaging
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The TRS4A65F,S1Q from Toshiba Semiconductor and Storage is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. Toshiba Semiconductor and Storage's dedication to quality means the TRS4A65F,S1Q meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 20 µA @ 650 V
- Capacitance @ Vr, F: 16pF @ 650V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F-2L
- Operating Temperature - Junction: 175°C (Max)
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