TSM032NH04CR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
40V, 81A, SINGLE N-CHANNEL POWER
$4.01
Available to order
Reference Price (USD)
1+
$4.01000
500+
$3.9699
1000+
$3.9298
1500+
$3.8897
2000+
$3.8496
2500+
$3.8095
Exquisite packaging
Discount
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The TSM032NH04CR RLG from Taiwan Semiconductor Corporation sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Taiwan Semiconductor Corporation's TSM032NH04CR RLG for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2896 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFNU (5x6)
- Package / Case: 8-PowerTDFN
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