TSM043NH04CR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
40V, 54A, SINGLE N-CHANNEL POWER
$3.63
Available to order
Reference Price (USD)
1+
$3.63000
500+
$3.5937
1000+
$3.5574
1500+
$3.5211
2000+
$3.4848
2500+
$3.4485
Exquisite packaging
Discount
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Enhance your electronic projects with the TSM043NH04CR RLG single MOSFET from Taiwan Semiconductor Corporation. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Taiwan Semiconductor Corporation's TSM043NH04CR RLG for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-PDFNU (5x6)
- Package / Case: 8-PowerTDFN
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