TSM048NB06LCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 60V 16A/107A 8PDFN
$4.00
Available to order
Reference Price (USD)
2,500+
$0.65520
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the TSM048NB06LCR RLG from Taiwan Semiconductor Corporation, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the TSM048NB06LCR RLG ensures reliable performance in demanding environments. Upgrade your circuit designs with Taiwan Semiconductor Corporation's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6253 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerTDFN
Related Products
Infineon Technologies
IRFB260NPBF
Infineon Technologies
AUIRLZ44Z
onsemi
FCP190N60E
STMicroelectronics
STB28N65M2
Infineon Technologies
IPW65R080CFDFKSA2
Infineon Technologies
IPA60R380C6XKSA1
Vishay Siliconix
SIHG25N40D-E3
Rectron USA
RM7N40S4
Infineon Technologies
IPN80R750P7ATMA1
NXP USA Inc.