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TSM126CX RFG

Taiwan Semiconductor Corporation
TSM126CX RFG Preview
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 30MA SOT23
$0.30
Available to order
Reference Price (USD)
3,000+
$0.13266
6,000+
$0.12462
15,000+
$0.11658
30,000+
$0.11256
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Rds On (Max) @ Id, Vgs: 800Ohm @ 16mA, 10V
  • Vgs(th) (Max) @ Id: 1V @ 8µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.18 nC @ 4.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 51.42 pF @ 25 V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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