TSM160N10CZ C0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 100V 160A TO220
$2.69
Available to order
Reference Price (USD)
1+
$2.82000
10+
$2.55000
100+
$2.04910
500+
$1.59372
1,000+
$1.32052
3,000+
$1.27498
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the TSM160N10CZ C0G by Taiwan Semiconductor Corporation, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the TSM160N10CZ C0G is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9840 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
onsemi
NVTFWS003N04CTAG
Vishay Siliconix
SQJQ186ER-T1_GE3
Vishay Siliconix
SIS447DN-T1-GE3
IXYS
IXFR36N50P
onsemi
FQD20N06TM
Infineon Technologies
SPI12N50C3IN
Alpha & Omega Semiconductor Inc.
AOB280L
Microchip Technology
APT10025JVFR
STMicroelectronics
STF6N62K3
Vishay Siliconix