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TSM250N02DCQ RFG

Taiwan Semiconductor Corporation
TSM250N02DCQ RFG Preview
Taiwan Semiconductor Corporation
MOSFET 2 N-CH 20V 5.8A 6TDFN
$1.06
Available to order
Reference Price (USD)
3,000+
$0.15562
6,000+
$0.14558
15,000+
$0.14056
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 775pF @ 10V
  • Power - Max: 620mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-TDFN (2x2)

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