TSM60NB600CF C0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 8A ITO220S
$4.04
Available to order
Reference Price (USD)
1+
$1.63000
10+
$1.44000
100+
$1.13780
500+
$0.88236
1,000+
$0.69660
3,000+
$0.65016
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the TSM60NB600CF C0G single MOSFET from Taiwan Semiconductor Corporation. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Taiwan Semiconductor Corporation's TSM60NB600CF C0G for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 528 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 41.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220S
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
IPP020N08N5AKSA1
Sanyo
2SJ652-RA11
Infineon Technologies
IPU60R1K4C6AKMA1
Vishay Siliconix
IRFBE30PBF-BE3
Fairchild Semiconductor
FDMC8884
Nexperia USA Inc.
PSMN013-30YLC,115
Vishay Siliconix
SI4421DY-T1-E3
Micro Commercial Co
MCM1208-TP
Nexperia USA Inc.
BSS138BKW,115
onsemi