TSM650P02CX RFG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 20V 4.1A SOT23
$0.74
Available to order
Reference Price (USD)
3,000+
$0.09648
6,000+
$0.09112
15,000+
$0.08308
30,000+
$0.07772
75,000+
$0.07504
Exquisite packaging
Discount
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Upgrade your designs with the TSM650P02CX RFG by Taiwan Semiconductor Corporation, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the TSM650P02CX RFG is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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