TTC0002(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 160V 18A TO3P
$2.53
Available to order
Reference Price (USD)
100+
$2.63250
Exquisite packaging
Discount
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The TTC0002(Q) Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the TTC0002(Q) provides consistent performance in demanding applications. Choose Toshiba Semiconductor and Storage for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 18 A
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 9A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 180 W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
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