TTC008(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 285V 1.5A PW-MOLD2
$0.58
Available to order
Reference Price (USD)
200+
$0.61805
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TTC008(Q) from Toshiba Semiconductor and Storage is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the TTC008(Q) is a reliable choice for both commercial and industrial use. Trust Toshiba Semiconductor and Storage to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 285 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 62.5mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
- Power - Max: 1.1 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: PW-MOLD2
Related Products
Diodes Incorporated
DZTA92-13
Nexperia USA Inc.
BF820W,135
Rohm Semiconductor
BC857BU3HZGT106
onsemi
DTA124E
NXP USA Inc.
PMST6428,115
Diotec Semiconductor
BC846C
Fairchild Semiconductor
MMBT2907
Rohm Semiconductor
SST3906T116
Renesas Electronics America Inc
2SA1871-AZ
Nexperia USA Inc.