TW015N120C,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
G3 1200V SIC-MOSFET TO-247 15MO
$71.28
Available to order
Reference Price (USD)
1+
$71.28000
500+
$70.5672
1000+
$69.8544
1500+
$69.1416
2000+
$68.4288
2500+
$67.716
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TW015N120C,S1F from Toshiba Semiconductor and Storage redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the TW015N120C,S1F offers the precision and reliability you need. Trust Toshiba Semiconductor and Storage to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id: 5V @ 11.7mA
- Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 431W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
Related Products
onsemi
FDB2710
NXP USA Inc.
BUK952R3-40E,127
Nexperia USA Inc.
BUK7S0R9-40HJ
Infineon Technologies
BSC011N03LSATMA1
Vishay Siliconix
SI2307CDS-T1-E3
Alpha & Omega Semiconductor Inc.
AON6794
Alpha & Omega Semiconductor Inc.
AONR66922
Goford Semiconductor
G30N02T
Vishay Siliconix
SQJQ112E-T1_GE3
Vishay Siliconix