TW070J120B,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
SICFET N-CH 1200V 36A TO3P
$33.97
Available to order
Reference Price (USD)
1+
$33.97000
500+
$33.6303
1000+
$33.2906
1500+
$32.9509
2000+
$32.6112
2500+
$32.2715
Exquisite packaging
Discount
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Enhance your electronic projects with the TW070J120B,S1Q single MOSFET from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Toshiba Semiconductor and Storage's TW070J120B,S1Q for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 20V
- Vgs(th) (Max) @ Id: 5.8V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
- Vgs (Max): ±25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 800 V
- FET Feature: Standard
- Power Dissipation (Max): 272W (Tc)
- Operating Temperature: -55°C ~ 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)
- Package / Case: TO-3P-3, SC-65-3
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