TW083N65C,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
G3 650V SIC-MOSFET TO-247 83MOH
$13.40
Available to order
Reference Price (USD)
1+
$13.40000
500+
$13.266
1000+
$13.132
1500+
$12.998
2000+
$12.864
2500+
$12.73
Exquisite packaging
Discount
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The TW083N65C,S1F by Toshiba Semiconductor and Storage is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Toshiba Semiconductor and Storage for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 113mOhm @ 15A, 18V
- Vgs(th) (Max) @ Id: 5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 111W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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